Methods, devices, and systems for dealing with threshold voltage change in memory devices
AssigneeMicron Technology, Inc.
InventorsZhenlei Shen, William H. Radke, Peter Feeley
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Abstract
The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.
Claims20
A memory device, comprising:
- an array of memory cells;
- and
- control circuitry coupled to the array and configured to:
- perform a soft sensing operation on the memory cells;
- input information from the soft sensing operation into an algorithm to determine changes in threshold voltages associated with the memory cells;
- and
- adjust a voltage used to sense a state of the memory cells based on the determined changes.
A method for operating a memory device, comprising:
- performing a soft sensing operation on a number of memory cells to sense threshold voltages associated with the memory cells;
- determining changes in threshold voltages associated with the memory cells by inputting the sensed threshold voltages into an algorithm;
- and
- adjusting a voltage used to sense a state of the memory cells based on the determined changes.
A memory device, comprising:
- an array of memory cells, wherein the memory cells are configured to store a number of states;
- and
- control circuitry coupled to the array and configured to:
- perform a soft sensing operation on the memory cells, wherein a quantity of states sensed during the soft sensing operation is greater than the number of states stored by the memory cells;
- input information from the soft sensing operation into an algorithm to determine changes in threshold voltages associated with the memory cells;
- and
- adjust a voltage used to sense a state of the memory cells based on the determined changes.
A memory device, comprising:
- an array of memory cells;
- and
- control circuitry coupled to the array and configured to:
- determine changes in threshold voltages associated with the memory cells without using a reference cell by sensing threshold voltages associated with the memory cells;
- and
- adjust a voltage used to sense a state of the memory cells based on the determined changes and without using a reference cell.
Dependencies are inferred from the claim text.