Back to results
US 8,576,631 B2Granted
Techniques for sensing a semiconductor memory device
AssigneeMicron Technology, Inc.
InventorJean-Michel Daga
Life of this patent
Estimating the term…
Abstract
Techniques for sensing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the technique(s) may be realized as a semiconductor memory device comprising a plurality of memory cells arranged in an array of rows and columns and data sense amplifier circuitry coupled to at least one of the plurality of memory cells. The data sense amplifier circuitry may comprise first amplifier circuitry and resistive circuitry, wherein the first amplifier circuitry and the resistive circuitry may form a feedback loop.
Claims19
A semiconductor memory device comprising:
- a plurality of memory cells arranged in an array of rows and columns;
- and
- data sense amplifier circuitry coupled to at least one of the plurality of memory cells, the data sense amplifier circuitry comprising:
- first amplifier circuitry comprising a first power transistor and a first switching transistor each coupled to a respective control signal line for controlling a state of the first power transistor and the first switching transistor;
- and
- resistive circuitry, wherein the first amplifier circuitry and the resistive circuitry form a feedback loop.
3 more elements
Dependencies are inferred from the claim text.