US 8,576,629 B2 · Operating method of nonvolatile memory device

Abstract

Disclosed is an operating method of a nonvolatile memory device, which includes programming the first selection transistors of the plurality of cell strings and programming the plurality of memory cells of the plurality of cell strings. The programming the first selection transistors comprises supplying a first voltage to a first bit line connected with a first selection transistor to be programmed and a different second voltage to a second bit line connected to a first selection transistor to be program inhibited; turning on the second selection transistors of the plurality of cell strings, and supplying a first program voltage to a selected first selection line among a plurality of first selection lines connected with the first selection transistors and a third voltage to an unselected first selection line among the plurality of first selection lines.

Claims20

Dependent claims

An operating method of a nonvolatile memory device which includes a plurality of cell strings, each cell string including a first selection transistor, a plurality of memory cells, and a second selection transistor stacked in a direction perpendicular to a substrate, the operating method comprising:

programming the first selection transistors of the plurality of cell strings;
and
programming the plurality of memory cells of the plurality of cell strings,
wherein programming the first selection transistors comprises:
supplying a first voltage to a first bit line connected with a first selection transistor to be programmed and a second voltage to a second bit line connected to a different first selection transistor to be program inhibited;
turning on the second selection transistors of the plurality of cell strings;
and
supplying a first program voltage to a selected first selection line among a plurality of first selection lines connected with the first selection transistors and a third voltage to an unselected first selection line among the plurality of first selection lines.

5 more elements

A method of programming a nonvolatile memory device which includes a plurality of cell strings, each cell string including a first selection transistor, a plurality of memory cells, and a second selection transistor, the method comprising:

programming the first selection transistors of the plurality of cell strings;
programming the second selection transistors of the plurality of cell strings;
and
programming the plurality of memory cells of the plurality of cell strings, wherein the operating method is performed in an order of programming the first selection transistors, programming the second selection transistors, and programming the plurality of memory cells,
wherein programming the first selection transistors comprises:
supplying a first voltage to a first bit line connected with a first selection transistor to be programmed and a second voltage to a second bit line connected to a different first selection transistor to be program inhibited;
supplying a turn-off voltage to the second selection transistors of the plurality of cell strings;
and
supplying a turn-on voltage to a plurality of word lines connected with the plurality of memory cells of the plurality of cell strings;
sequentially supplying a turn-off voltage and a program voltage to a selected first selection line among a plurality of first selection lines connected with the first selection transistors;
and
supplying a third voltage to an unselected first selection line among the plurality of first selection lines.

9 more elements

Dependencies are inferred from the claim text.

Operating method of nonvolatile memory device

Life of this patent

Operating method of nonvolatile memory device

Life of this patent

Abstract

Claims20