On chip dynamic read for non-volatile storage

A method of operating non-volatile storage, comprising:

• reading a group of non-volatile storage elements on a memory die at a first read level, the non-volatile storage elements store a plurality of data states, the first read level is near a read level for distinguishing between two data states of the plurality of data states;
• storing, in a first data latch on the memory die, first results of the read at the first level for each of the non-volatile storage elements in the group;
• reading the group of non-volatile storage elements at a second read level, the second read level is near the read level for distinguishing between the two data states, the first and second read levels test for different threshold voltages;
• storing, in a second data latch on the memory die, second results of the read at the second level for each of the non-volatile storage elements in the group;
• performing an XOR between the first results in the first data latch and the second results in the second data latch to produce a mis-compare count;
• and
• using one of the first results or the second results as results for distinguishing between the two data states if the mis-compare count is less than a threshold amount.

A non-volatile storage device, comprising:

• a memory die;
• a group of non-volatile storage elements on the memory die, the group of non-volatile storage elements store a plurality of data states;
• a first data latch on the memory die;
• a second data latch on the memory die;
• and
• one or more managing circuits in communication with the group of non-volatile storage elements, the one or more managing circuits read the group of non-volatile storage elements at a first read level, the first read level is near a read level for distinguishing between two data states of the plurality of data states, the one or more managing circuits store first results of the read at the first level for each of the non-volatile storage elements in the group in the first data latch, the one or more managing circuits read the group of non-volatile storage elements at a second read level, the second read level is near the read level for distinguishing between the two data states, the first and second read levels test for different threshold voltages, the one or more managing circuits store second results of the read at the second level for each of the non-volatile storage elements in the group in the second data latch, the one or more managing circuits perform an XOR between the first results in the first data latch and the second results in the second data latch to produce a mis-compare count, the one or more managing circuits use one of the first results or the second results as results for distinguishing between the two data states if the mis-compare count is less than a threshold amount.