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US 8,576,622 B2Granted
Non-volatile memory device and read method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSangyong Yoon, Ki-tae Park, Hongrak Son
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Abstract
In one embodiment, the method for reading memory cells in an array of non-volatile memory cells includes reading data from a memory cell using a set of hard decision voltages and at least a first set of soft decision voltages based on a single read command.
Claims33
A method for reading memory cells in an array of non-volatile memory cells, the method comprising:
- reading data from a memory cell using a set of hard decision voltages and at least a first set of soft decision voltages based on a single read command.
A method for reading memory cells in an array of non-volatile memory cells, the method comprising:
- sending a read command;
- sending a first read out command;
- receiving first read results in response to the first read out command, the first read results being based on a read operation using a set of hard decision voltages;
- first determining if errors in the first read results are correctable;
- sending a second read out command without sending an associated read command if the first determining determines errors in the first read results are not correctable;
- and
- receiving second read results in response to the second read out command, the second read results being based on a read operation using a first set of soft decision voltages.
4 more elements
A non-volatile multi-level memory device, comprising:
- an array of non-volatile memory cells;
- control logic configured to read data from a memory cell array using a set of hard decision voltages and at least a first set of soft decision voltages based on a single read command.
Dependencies are inferred from the claim text.