Circuit and method for generating a reference level for a magnetic random access memory element

A method of establishing a reference level comprising:

• providing at least first and second non-overlapping paths;
• providing at least first and second reference magnetic random access memory (MRAM) elements in the first path;
• providing at least third and fourth reference MRAM elements in the second path;
• measuring a first value indicative of a resistance of the first path;
• measuring a second value indicative of a resistance of the second path;
• and
• setting the reference level based at least in part on the first and second values.

A reference circuit for generating a reference level, the reference circuit comprising:

• first and second non-overlapping paths from a first node to a second node;
• first and second reference MRAM elements in the first path;
• third and fourth reference MRAM elements in the second path;
• and
• a measurement circuit receiving a first value indicative of a resistance between the first node and the second node and outputting the reference level based at least in part on the first value,
• wherein both of the first and second MRAM elements are in a parallel state or both of the first and second MRAM elements are in an antiparallel state.

A reference circuit for generating a reference level, the reference circuit comprising:

• at least first and second non-overlapping paths;
• at least first and second reference magnetic random access memory (MRAM) elements in the first path;
• at least third and fourth reference MRAM elements in the second path;
• and
• a controller for measuring a first value indicative of a resistance of the first path and for measuring a second value indicative of a resistance of the second path and for setting the reference level based at least in part on the first and second values.

A reference circuit for generating a reference level, the reference circuit comprising:

• first and second path means for connecting a first node and a second node;
• first and second reference MRAM elements in the first path means, the first and second MRAM elements both being in a parallel magnetic state or both being in an antiparallel magnetic state;
• third and fourth reference MRAM elements in the second path means;
• and
• determining means for receiving a first value indicative of a resistance between the first node and the second node and outputting the reference level based at least in part on the first value.

A reference circuit for generating a reference level, the reference circuit comprising:

• at least first and second non-overlapping path means for connecting a first node and a second node;
• at least first and second reference magnetic random access memory (MRAM) elements in the first path means;
• at least third and fourth reference MRAM elements in the second path means;
• control means for measuring a first value indicative of a resistance of the first path means and for measuring a second value indicative of a resistance of the second path means and for setting the reference level based at least in part on the first and second measured values.

A method of establishing a reference level comprising:

• steps for providing first and second non-overlapping paths from a first node to a second node;
• steps for providing first and second reference magnetic random access memory (MRAM) elements in the first path, the first and second MRAM elements both being in a parallel magnetic state or both being in an antiparallel magnetic state;
• steps for providing third and fourth reference MRAM elements in the second path;
• steps for measuring a first value indicative of a resistance between the first node and the second node;
• and
• steps for setting the reference level based at least in part on the measured value.

A method of establishing a reference level comprising:

• steps for providing at least first and second non-overlapping paths;
• steps for providing at least first and second reference magnetic random access memory (MRAM) elements in the first path;
• steps for providing at least third and fourth reference MRAM elements in the second path;
• steps for measuring a first value indicative of a resistance of the first path;
• steps for measuring a second value indicative of a resistance of the second path;
• and
• steps for setting the reference level based at least in part on the first and second measured values.

A reference circuit for generating a reference level, the reference circuit comprising:

• first and second non-overlapping paths from a first node to a second node;
• first and second reference MRAM elements in the first path;
• third and fourth reference MRAM elements in the second path;
• a first path intermediate node located between the first reference MRAM element in the first path and the second reference MRAM element in the first path electrically connected to a second path intermediate node located between the third reference MRAM element in the second path and the fourth reference MRAM element in the second path;
• and
• a measurement circuit receiving a first value indicative of a resistance between the first node and the second node and outputting the reference level based at least in part on the first value.