One-time programmable memories using polysilicon diodes as program selectors

A One-Time Programmable (OTP) memory, comprising:

• a plurality of OTP cells, each including (i) a polysilicon segment as OTP element, and (ii) a diode as program selector constructed from a polysilicon structure having a first terminal from a first region with a first type of dopant, and a second terminal from a second region with a second type of dopant, the first terminal of the diode being coupled to a first terminal of the OTP element, the OTP element being programmable by conducting a current flowing through the OTP element and the diode, the polysilicon segment being formed in or on the polysilicon structure;
• a plurality of local wordlines, each coupled to a plurality of the OTP cells via the second terminal of the diodes and having a first resistivity;
• a plurality of global wordlines, each coupled to at least one of the local wordlines and having a second resistivity;
• and
• a plurality of bitlines, each coupled to a plurality of the OTP cells via a second terminal of the OTP element.

An electronics system, comprising:

• a processor;
• and
• at least one OTP memory operatively connected to the processor, the OTP memory comprising:
• a plurality of OTP cells, each including an OTP element and a diode as program selector constructed from a polysilicon structure having a first terminal from a first region with a first type of dopant, and a second terminal from a second region with a second type of dopant, the first terminal of the diode being coupled to a first terminal of the OTP element, the OTP element being programmable by conducting a current flowing through the OTP element and the diode;
• a plurality of local wordlines, each coupled to a plurality of the OTP cells via the second terminal of the diodes and having a first resistivity;
• a plurality of global wordlines, each coupled to at least one of the local wordlines and having a second resistivity;
• and
• a plurality of bitlines, each coupled to a plurality of the OTP cells via a second terminal of the OTP element.

A method for operating an OTP memory, comprising:

• providing a plurality of OTP cells, each including an OTP element and a diode as program selector constructed from a polysilicon structure having a first terminal from a first region with a first type of dopant and a second terminal from a second region with a second type of dopant, the first terminal of the diode being coupled to the first terminal of the OTP element, the OTP element being programmable by conducting a current flowing through the OTP element and the program selector;
• providing a plurality of local wordlines, each coupled to a plurality of the OTP cells via the second terminal of the diodes and having a first resistivity;
• providing a plurality of global wordlines, each coupled to at least one of the local wordlines and having a second resistivity;
• providing a plurality of bitlines, each coupled to a plurality of the OTP cells via a second terminal of the OTP element;
• and
• programming at least one selected OTP cell into a different logic state by applying voltages to a selected one of the global wordlines and a selected one of the bitlines to conduct a current and change the resistance of the selected OTP cell.