Content addressable memory

A content addressable memory, comprising:

• a pair of spin MOSFETs including:
• a first spin MOSFET whose magnetization state is set in a first state when stored data is a first value and the magnetization state is set in a second state when the stored data is a second value;
• and
• a second spin MOSFET whose magnetization state is set in the second state when the stored data is the first value and the magnetization state is set in the first state when the stored data is the second value, the second spin MOSFET being connected in parallel with the first spin MOSFET;
• a first wiring configured to apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data;
• and
• a second wiring configured to apply a current to both of the first spin MOSFET and the second spin MOSFET,
• wherein the stored data includes three values of “1”, “0” and “Don't care”, wherein, when the stored data is “1” or “0”, the first spin MOSFET is set in a first magnetization state while the second spin MOSFET is set in a second magnetization state, so that resistances thereof are differentiated from each other, and
• wherein, when the stored data is “Don't care”, both of the first spin MOSFET and the second spin MOSFET are set collectively in the first magnetization state.

A content addressable memory, comprising:

• a pair of spin MOSFETs including:
• a first spin MOSFET whose magnetization state is set in accordance with stored data;
• and
• a second spin MOSFET whose magnetization state is set in accordance with the stored data, the second spin MOSFET being connected in parallel with the first spin MOSFET;
• a first wiring configured to:
• apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data, and
• apply a writing voltage for writing the stored data, which is larger than the gate voltage for searching the search data;
• and
• a second wiring configured to apply a current to both of the first spin MOSFET and the second spin MOSFET.

A content addressable memory, comprising:

• a plurality of pairs of spin MOSFETs connected in series, each pair of spin MOSFETs including:
• a first spin MOSFET whose magnetization state is set in accordance with stored data;
• and
• a second spin MOSFET whose magnetization state is set in accordance with the stored data, the second spin MOSFET being connected in parallel with the first spin MOSFET;
• a first wiring configured to apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data;
• and
• a second wiring configured to apply a current to the pairs of spin MOSFETs;
• and
• a control circuit configured to set magnetization states of the series-connected pairs of spin MOSFETs, by,
• while applying the gate voltage such that spin MOSFETs to be set into a first magnetization state among the series-connected pairs of spin MOSFETs are made electrically conductive, applying a current not smaller than a predetermined threshold to the series-connected pairs of spin MOSFETs in a first direction, and,
• while applying the gate voltage such that spin MOSFETs to be set into a second magnetization state different from the first magnetization state are made electrically conductive, applying the current not smaller than the predetermined threshold to the series-connected pairs of spin MOSFETs in a second direction reverse to the first direction.

A content addressable memory, comprising:

• a pair of spin MOSFETs including:
• a first spin MOSFET whose magnetization state is set in a first state when stored data is a first value and the magnetization state is set in a second state when the stored data is a second value;
• and
• a second spin MOSFET whose magnetization state is set in the second state when the stored data is the first value and the magnetization state is set in the first state when the stored data is the second value, the second spin MOSFET being connected in parallel with the first spin MOSFET;
• a first wiring configured to:
• apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data, and
• apply a writing voltage for writing the stored data, which is larger than the gate voltage for searching the search data;
• and
• a second wiring configured to apply a current to both of the first spin MOSFET and the second spin MOSFET.

A content addressable memory, comprising:

• a plurality of pairs of spin MOSFETs connected in series, each pair of spin MOSFETs including:
• a first spin MOSFET whose magnetization state is set in a first state when stored data is a first value and the magnetization state is set in a second state when the stored data is a second value;
• and
• a second spin MOSFET whose magnetization state is set in the second state when the stored data is the first value and the magnetization state is set in the first state when the stored data is the second value, the second spin MOSFET being connected in parallel with the first spin MOSFET;
• a first wiring configured to apply a gate voltage so that any one of the first spin MOSFET and the second spin MOSFET becomes electrically conductive in accordance with search data;
• and
• a second wiring configured to apply a current to the pairs of spin MOSFETs;
• and
• a control circuit configured to set magnetization states of the series-connected pairs of spin MOSFETs, by,
• while applying the gate voltage such that spin MOSFETs to be set into a first magnetization state among the series-connected pairs of spin MOSFETs are made electrically conductive, applying a current not smaller than a predetermined threshold to the series-connected pairs of spin MOSFETs in a first direction, and,
• while applying the gate voltage such that spin MOSFETs to be set into a second magnetization state different from the first magnetization state are made electrically conductive, applying the current not smaller than the predetermined threshold to the series-connected pairs of spin MOSFETs in a second direction reverse to the first direction.