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US 8,576,318 B2Granted
Image sensors and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYun-Ki Lee, Duck-Hyung Lee
Life of this patent
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Abstract
An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate.
Claims19
An image sensor comprising:
- a substrate having a pixel region including a plurality of unit pixels and a non-pixel region;
- at least one first well in the non-pixel region;
- an interconnect structure including an interlayer dielectric layer on a first side of the substrate;
- and
- a base well in the non-pixel region and between the at least one first well and a second side of the substrate, wherein the base well does not overlap the unit pixels in the pixel region, and wherein the base well does not contact the interlayer dielectric layer.
2 more elements
An image sensor comprising:
- a substrate having a pixel region including a plurality of unit pixels and a non-pixel region;
- a plurality of first wells in the non-pixel region;
- an interconnect structure including interlayer dielectric layer on a first side of the substrate;
- and
- a base well in the non-pixel region, the base well having a higher doping concentration than a doping concentration of the plurality of first wells, wherein the base well does not overlap the plurality of unit pixels in the pixel region, and wherein
- the base well does not contact the interlayer dielectric layer,
- the plurality of first wells are coupled to the base well, and
- at least one of the first wells is coupled to a first well-bias through another one of the first wells.
5 more elements
Dependencies are inferred from the claim text.