US 8,576,009 B2 · Broadband high power amplifier

Abstract

A broadband high power amplifier architecture is disclosed. One example configuration includes a first plurality of distributed amplification cells connected in a first string, wherein a conductive trace operatively coupling outputs of the first string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the first string. The amplifier further includes a second plurality of distributed amplification cells connected in a second string, wherein a conductive trace operatively coupling outputs of the second string cells is a stepped structure, such that the associated inductance successively decreases from a first cell to a last cell of the second string. A combiner combines output signals of the first and second strings. Additional strings and/or stages can be provided, and the degree of combining will depend, for example, on factors such as the application and desired output power.

Claims20

Dependent claims

A method of forming a power amplifier, the method comprising:

constructing one or more strings of amplification stages on a substrate, wherein constructing each string of the one or more strings includes:
constructing a plurality of amplification stages, wherein constructing each amplification stage of the plurality of amplification stages comprises:
constructing a semiconductor device on the substrate;
placing an inductor at a drain of the semiconductor device;
and
placing an inductor at a gate of the semiconductor device;
and
coupling the plurality of amplification stages together serially to form the string;
wherein the inductor at the drain of the semiconductor device of each stage in the string has an inductance that is decreased compared to the inductor at the drain of the semiconductor device of a previous amplification stage in the string;
and
wherein the inductor at the gate of the semiconductor device of each stage in the string has an inductance that is increased compared to the inductor at the gate of the semiconductor device of a previous amplification stage in the string.

8 more elements

A method of forming a power amplifier, the method comprising:

constructing one or more strings of amplification stages on a substrate, wherein constructing each string of the one or more strings includes:
constructing a plurality of amplification stages, wherein constructing each amplification stage of the plurality of amplification stages comprises:
constructing a semiconductor device on the substrate;
placing a plurality of inductors at a drain of the semiconductor device, wherein the plurality of inductors form a drain inductance;
placing a transmission line segment at the drain of the semiconductor device;
placing a plurality of inductors at a gate of the semiconductor device, wherein the plurality of inductors form a gate inductance;
and
placing a transmission line segment at the gate of the semiconductor device;
and
coupling the plurality of amplification stages together serially to form the string;
wherein the drain inductance of each stage in the string is decreased compared to the drain inductance of a previous amplification stage in the string;
and
wherein the gate inductance of each amplification stage in the string is increased compared to the gate inductance of a previous amplification stage in the string.

10 more elements

Dependencies are inferred from the claim text.

Broadband high power amplifier

Life of this patent

Broadband high power amplifier

Life of this patent

Abstract

Claims20