Plasma klystron switch

A plasma klystron switching device, comprising:

• a low-dielectric substrate;
• a plasma cavity internally pressurized by an inert gas, wherein the plasma cavity is operably connected to a first surface of the low-dielectric substrate;
• a circuit assembly formed on the first surface of the low-dielectric substrate and enclosed by the plasma cavity, wherein the circuit assembly includes a first electrode and a second electrode, wherein the first electrode and second electrode are substantially coplanar and configured to form a switching gap between a first portion of the first electrode and a first portion of the second electrode, wherein the switching gap is configured to act as a high conductance plasma generation zone during an ON state of the plasma klystron switching device and a low conductance zone during an OFF state of the plasma klystron switching device;
• an evacuated klystron resonance generator having a first end portion operably connected to a second surface of the low-dielectric substrate, wherein the second surface of the low-dielectric substrate and the first surface of the low-dielectric substrate are on opposite sides of the low-dielectric substrate, wherein the klystron resonance generator includes one or more klystron resonance cavities, wherein one or more internal surfaces of the one or more klystron resonance cavities are at least partially metalized, wherein the first portion of the klystron resonance generator includes a coupling aperture configured to RF couple the one or more klystron resonance cavities and the plasma cavity and is at least partially aligned with the gap of the circuit assembly;
• and
• a field emitter array configured to energize the klystron resonance generator, wherein the field emitter array is disposed within a second end portion of the klystron resonator generator, wherein the second end portion of the klystron resonance generator is positioned opposite of the first end portion of the klystron resonance generator.