Stacked bulk acoustic resonator
AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsAlexandre Augusto Shirakawa, Paul Bradley, Dariusz Burak, Stefan Bader, Chris Feng
Life of this patent
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AssigneeAvago Technologies General IP (Singapore) Pte. Ltd.
InventorsAlexandre Augusto Shirakawa, Paul Bradley, Dariusz Burak, Stefan Bader, Chris Feng
Estimating the term…
A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.
A stacked bulk acoustic resonator, comprising:
A stacked bulk acoustic resonator, comprising:
A stacked bulk acoustic resonator, comprising:
Dependencies are inferred from the claim text.