Semiconductor device and method of embedding thermally conductive layer in interconnect structure for heat dissipation

A semiconductor device, comprising:

• a first semiconductor component;
• a first thermally conductive layer formed over a first surface of the first semiconductor component;
• an encapsulant deposited around the first semiconductor component;
• and
• a first interconnect structure formed over a first surface of the encapsulant.

A semiconductor device, comprising:

• a first semiconductor component;
• a first thermally conductive layer formed over a first surface of the first semiconductor component;
• and
• a first interconnect structure formed over a second surface of the first semiconductor component opposite the first surface of the first semiconductor component, the first interconnect structure including a second thermally conductive layer disposed over the first semiconductor component.

A semiconductor device, comprising:

• a first semiconductor component;
• a first thermally conductive layer formed over a first surface of the first semiconductor component;
• and
• a second thermally conductive layer formed over a second surface of the first semiconductor component opposite the first surface of the first semiconductor component.