Back to results
US 8,575,760 B2Granted
Semiconductor devices having electrodes
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-hyun Phee, Uihyouong Lee, Ju-il Choi, Jung-Hwan Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having a first surface and an opposite second surface. An electrode extends within the substrate towards the first surface and has a protruding portion extending from the first surface. A supporting portion extends from the first surface of the substrate to a sidewall of the protruding portion and supports the protruding portion.
Claims25
A semiconductor device, comprising:
- a substrate having a first surface and an opposite second surface;
- an electrode extending within the substrate towards the first surface and having a protruding portion extending from the first surface;
- and
- a supporting portion extending from the first surface of the substrate to a sidewall of the protruding portion that supports the protruding portion,
- wherein the supporting portion has a height proximate the sidewall of the protruding portion of at least half of a height of the protruding portion extending from the first surface.
2 more elements
A semiconductor device comprising:
- a substrate having an upper surface and a lower surface opposite to the upper surface;
- and
- a through electrode penetrating the substrate,
- wherein the through electrode comprises a protruding portion protruding from the lower surface, and the substrate comprises a supporting portion extending from the lower surface toward the protruding portion to surround a circumferential side of the protruding portion,
- wherein the supporting portion has a height greater than about a half of a protrusion length of the protruding portion.
2 more elements
Dependencies are inferred from the claim text.