Semiconductor device having a conductive structure including oxide and non oxide portions
AssigneeSamsung Electronics Co., Ltd.
InventorsSuk-hun Choi, Ki-ho Bae, Yi-koan Hong, Kyung-hyun Kim, Tae-hyun Kim, Kyung-tae Nam, Jun-ho Jeong
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Abstract
A semiconductor device includes an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing the substrate, a barrier layer pattern disposed within the opening, and a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening, wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern.
Claims32
A semiconductor device comprising:
- an interlayer insulating layer disposed on a substrate, the interlayer insulating layer comprising an opening exposing a conductive portion on the substrate;
- a barrier layer pattern disposed within the opening;
- and
- a conductive pattern disposed on the barrier layer pattern, the conductive pattern having an oxidized portion extending out of the opening and a non-oxidized portion within the opening,
- wherein a width of the conductive pattern is determined by a thickness of the barrier layer pattern, wherein a top surface of the non-oxidized portion is lower than a top surface of the interlayer insulating layer, wherein a size of a cross-sectional area of the oxidized portion in a plan view is smaller than a size of a cross-sectional area of the opening in the plan view.
A semiconductor device comprising:
- a substrate;
- an insulating layer having an opening disposed on the substrate;
- a metal pattern disposed on the substrate;
- and
- a metal oxide pattern disposed on the metal pattern and inside the opening,
- wherein a cross-sectional area of the entire metal oxide pattern is smaller than a cross-sectional area of the metal pattern, wherein a top surface of the metal pattern is lower than a top surface of the insulating layer, and wherein spacer is disposed between the metal oxide pattern and the insulating layer.
A semiconductor device comprising:
- a first insulating layer disposed on a substrate;
- a second insulating layer disposed on the first insulating layer, the second insulating layer comprising an opening;
- a third insulating layer disposed on the second insulating layer;
- a fourth insulating layer disposed on the third insulating layer;
- a memory storage device disposed in the fourth insulating layer;
- and
- a conductive pattern for heating the memory storage device, the conductive pattern comprising a metal pattern and a metal oxide pattern,
- wherein the metal pattern is disposed in the opening of the second insulating layer, the metal oxide pattern is disposed in the third insulating layer, and a width of the conductive pattern is smaller than a width of the opening.
Dependencies are inferred from the claim text.