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US 8,575,741 B2Granted
Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.
Claims17
A semiconductor device comprising:
- an island-like single crystalline semiconductor layer over a silicon substrate with a bonded interface interposed between the island-like single crystalline semiconductor layer and the silicon substrate, the island-like single crystalline semiconductor layer comprising part of a single crystalline silicon substrate different from the silicon substrate and having at least a channel formation region and source and drain regions;
- an insulating film formed on the island-like single crystalline semiconductor layer;
- a gate electrode formed over the channel formation region with the insulating film interposed therebetween;
- side walls formed adjacent to side surfaces of the gate electrode;
- and
- an interlayer insulating film comprising silicon nitride formed over the gate electrode and the side walls, wherein a top face of the island-like single crystalline semiconductor layer under the gate electrode is thermally oxidized to form the insulating film,
- wherein a bottom face of the island-like single crystalline semiconductor layer is thermally oxidized to form a silicon oxide layer in contact with the bottom face,
- wherein each of the source and drain regions includes at least a portion that extends through an entire thickness of the island-like single crystalline semiconductor layer such that the source and drain regions contact the silicon oxide layer, and
- wherein an upper portion of the gate electrode and upper portions of the source and drain regions comprise a metal silicide.
6 more elements
A semiconductor device comprising:
- an island-like single crystalline semiconductor layer over a silicon substrate with a bonded interface interposed between the island-like single crystalline semiconductor layer and the silicon substrate, the island-like single crystalline semiconductor layer comprising part of a single crystalline silicon substrate different from the silicon substrate and having at least a channel formation region, source and drain regions, and LDD regions;
- an insulating film formed on the island-like single crystalline semiconductor layer;
- a gate electrode formed over the channel formation region with the insulating film interposed therebetween;
- side walls formed adjacent to side surfaces of the gate electrode, wherein the LDD regions are located below the side walls with the insulating film interposed therebetween;
- and
- an interlayer insulating film comprising silicon nitride formed over the gate electrode and the side walls, wherein a top face of the island-like single crystalline semiconductor layer under the gate electrode is thermally oxidized to form the insulating film,
- wherein a bottom face of the island-like single crystalline semiconductor layer is thermally oxidized to form a silicon oxide layer in contact with the bottom face,
- wherein each of the source and drain regions includes at least a portion that extends through an entire thickness of the island-like single crystalline semiconductor layer such that the source and drain regions contact the silicon oxide layer, and
- wherein an upper portion of the gate electrode and upper portions of the source and drain regions comprise a metal silicide.
6 more elements
Dependencies are inferred from the claim text.