Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsYohihiro Satou, Tomoaki Uno, Nobuyoshi Matsuura, Masaki Shiraishi
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Abstract
The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
Claims12
A method of manufacturing a semiconductor device comprising:
- (a) providing a lead frame having a first chip mounting portion on which a first semiconductor chip is mounted, a second chip mounting portion on which a second semiconductor chip is mounted, a plurality of first suspension leads connected to the first chip mounting portion and a frame portion, and a plurality of second suspension leads connected to the second chip mounting portion and the frame portion, the first and second chip mounting portions being disposed side by side along a first direction;
- and
- (b) electrically connecting a pad of an obverse surface of the first semiconductor chip to the second chip mounting portion via a first metal conductor,
- wherein, in a plan view, the first metal conductor;
- has an elongated shape with its longest length extending along the first direction and the plurality of second suspension leads includes a suspension lead which;
- has an elongated shape with its longest length extending along a second direction perpendicular to the first direction.
Dependencies are inferred from the claim text.