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US 8,575,730 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorYasutaka Nakashiba
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor device which includes a semiconductor chip and a base substrate. The semiconductor chip includes a semiconductor substrate, an interconnect layer and a high-frequency interconnect. The interconnect layer is provided on the substrate. The high-frequency interconnect is formed within the interconnect layer. The semiconductor chip is mounted onto the base substrate. An electromagnetic shield layer is provided between the high-frequency interconnect and the interconnect.
Claims10
A semiconductor device comprising:
- an interconnect substrate including a first interconnect;
- and
- a semiconductor chip mounted on the interconnect substrate, the semiconductor chip including:
- a substrate;
- an interconnect layer provided on a surface of the substrate;
- a second interconnect provided in the interconnect layer, the second interconnect formed to have an electric coil-shape;
- and
- an electroconductive pattern formed on the interconnect layer, the electroconductive pattern applied with a constant potential,
- wherein the electroconductive pattern is arranged between the first interconnect and the second interconnect.
6 more elements
A semiconductor device comprising:
- an interconnect substrate including a first interconnect;
- and
- a semiconductor chip mounted on the interconnect substrate, the semiconductor chip including:
- a substrate;
- an interconnect layer provided on a surface of the substrate;
- a second interconnect provided in the interconnect layer, the second interconnect formed to have an electric coil-shape;
- and
- an electroconductive shield formed on the interconnect layer, the electroconductive shield applied with a constant potential,
- wherein the electroconductive shield is arranged between the first interconnect and the second interconnect.
6 more elements
Dependencies are inferred from the claim text.