Method and surface morphology of non-polar gallium nitride containing substrates
AssigneeSoraa, Inc.
InventorsJames W. Raring, Christiane Poblenz
Life of this patent
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Abstract
An optical device, e.g., LED, laser. The device includes a non-polar gallium nitride substrate member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the slightly off-axis non-polar oriented crystalline surface plane is up to about −0.6 degrees in a c-plane direction, but can be others. In a specific embodiment, the present invention provides a gallium nitride containing epitaxial layer formed overlying the slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the device includes a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.
Claims24
An optical device comprising:
- a gallium- and nitrogen-containing substrate having an off-axis non-polar oriented crystalline surface plane, the off-axis non-polar oriented crystalline surface plane being defined from the non-polar (10-10) plane with a negative angle toward the c-plane (0001), a magnitude of the negative angle being greater than about 0.6 degrees;
- a gallium- and nitrogen-containing epitaxial layer overlying the off-axis non-polar oriented crystalline surface plane;
- and
- a surface region overlying the gallium- and nitrogen-containing epitaxial layer, the surface region being substantially free from hillocks.
An optical device comprising:
- a gallium- and nitrogen-containing substrate having an off-axis non-polar oriented crystalline surface plane, the off-axis non-polar oriented crystalline surface plane being defined from the non-polar (10-10) plane with an angle ranging from about 0 degrees to a predetermined angle toward either or both the c-plane and the a-plane;
- a gallium- and nitrogen-containing epitaxial layer overlying the off-axis non-polar oriented crystalline surface plane, the gallium- and nitrogen-containing epitaxial layer comprising at least a region of a quantum well formed by at least an atmospheric pressure epitaxial formation process, the quantum well being at least 3.5 nanometers thick;
- and
- a surface region overlying the gallium- and nitrogen-containing epitaxial layer, the surface region being substantially free from hillocks.
Dependencies are inferred from the claim text.