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US 8,575,726 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeNissan Motor Co., Ltd.
InventorYoshinori Murakami
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor chip including: a first main face having an edge portion, a second main face locating the opposite side to the first main face, a crystalline defect region present within a region including at least the edge portion being adjacent to the first main face, the crystalline defect region being configured to have lower stress than the stress in the other semiconductor region for the same strain; and a metallic substrate to be bonded via a bonding member to the first main face of the semiconductor chip.
Claims22
A semiconductor device comprising:
- a semiconductor chip including:
- a first main face having an edge portion,
- a second main face located opposite to the first main face,
- a crystalline defect region present within a region of the edge portion and adjacent to the first main face, the crystalline defect region being structured to have a first stress for a strain, and
- an other semiconductor region present in a region other than the region of the edge portion within which the crystalline defect region is present, the other semiconductor region being structured to have a second stress for the strain, the first stress being lower than the second stress;
- and
- a metallic substrate to be bonded via a bonding member to the first main face of the semiconductor chip.
4 more elements
Dependencies are inferred from the claim text.