Semiconductor device, manufacturing method thereof, and display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroshi Shibata, Shinji Maekawa
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Abstract
A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resistance of the entire semiconductor layer of a TFT which is in an on state is reduced to increase an on current. In addition, a carrier life time due to photoexcitation produced in the high concentration impurity region can be shortened to reduce light sensitivity.
Claims6
A semiconductor device comprising:
- a thin film transistor;
- a capacitor element comprising a first electrode and a second electrode over the first electrode with a first insulating film interposed therebetween;
- a second insulating film over the thin film transistor and the second electrode of the capacitor element;
- a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor and the capacitor element;
- and
- a liquid crystal provided over the pixel electrode,
- wherein the second electrode of the capacitor element is connected with one of a source and a drain of the thin film transistor;
- and
- wherein the second electrode of the capacitor element is extended over a gate electrode of the thin film transistor.
A semiconductor device comprising:
- a thin film transistor;
- a capacitor element comprising a first electrode and a second electrode over the first electrode with a first insulating film interposed therebetween;
- a second insulating film over the thin film transistor and the second electrode of the capacitor element;
- a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor and the capacitor element;
- and
- a liquid crystal provided over the pixel electrode,
- wherein the second electrode of the capacitor element is connected with one of a source and a drain of the thin film transistor;
- and
- wherein the second electrode of the capacitor element is extended over a gate electrode of the thin film transistor and overlapped with a light shielding layer provided over the second electrode of the capacitor element.
Dependencies are inferred from the claim text.