Semiconductor device and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorPing-Chia Shih
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes the following steps. At first, a semiconductor substrate is provided. A gate stack layer is formed on the semiconductor substrate, and the gate stack layer further includes a cap layer disposed thereon. Furthermore, two first spacers surrounding sidewalls of the gate stack layer is further formed. Subsequently, the cap layer is removed, and two second spacers are formed on a part of the gate stack layer. Afterwards, a part of the first spacers and the gate stack layer not overlapped with the two second spacers are removed to form two gate stack structures.
Claims20
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a gate stack layer on the semiconductor substrate, wherein the gate stack layer further comprises a cap layer disposed thereon;
- forming two first spacers surrounding the opposite sidewalls of the gate stack layer;
- removing the cap layer;
- forming two second spacers on a part of the gate stack layer;
- and
- simultaneously removing a part of the first spacers and the gate stack layer not overlapped with the second spacers to form two gate stack structures.
A semiconductor device, comprising:
- a semiconductor substrate;
- and
- at least a gate structure disposed on the semiconductor substrate, wherein the gate structure comprises a first gate, a second gate and a top cap layer stacked sequentially on the semiconductor substrate, a top surface of the top cap layer is not parallel to the semiconductor substrate, and the gate structure further comprises a third gate disposed at a side of the first gate and the second gate, and the third gate is lower than the top cap layer.
Dependencies are inferred from the claim text.