Three dimensional semiconductor memory devices and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBio Kim, Kihyun Hwang, Jaeyoung Ahn, SeungHyun Lim, Dongwoo Kim
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Abstract
Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
Claims8
A three-dimensional semiconductor device, comprising:
- a substrate;
- conductive patterns stacked on the substrate;
- and
- at least one active pattern penetrating the conductive patterns and coupled to the substrate,
- wherein each active pattern comprises:
- a first doped region provided in an upper portion of the active pattern;
- and
- a diffusion-resistant doped region overlapped with at least a portion of the first doped region,
- wherein the diffusion-resistant doped region is a region doped with carbon wherein the first doped region is n-type;
- and wherein a point with the highest carbon concentration of the diffusion-resistant doped region is located at a deeper level than a point with the highest n-type impurity concentration of the first doped region.
The A three-dimensional semiconductor device, comprising:
- a substrate;
- conductive patterns stacked on the substrate;
- and at least one active pattern penetrating the conductive patterns and coupled to the substrate, wherein each active pattern comprises:
- a first doped region provided in an upper portion of the active pattern;
- and a diffusion-resistant doped region overlapped with at least a portion of the first doped region, wherein the diffusion-resistant doped region is a region doped with carbon, wherein the first doped region is doped with n-type impurities and a point with the highest carbon concentration is located at a lower level than a point with the highest n-type impurity concentration of the first doped region.
Dependencies are inferred from the claim text.