US 8,575,667 B2 · Magnetic memory devices with thin conductive bridges

Abstract

A magnetic memory device includes a free layer and a guide layer on a substrate. An insulating layer is interposed between the free layer and the guide layer. At least one conductive bridge passes through the insulating layer and electrically connects the free layer and the guide layer. A diffusion barrier may be interposed between the guide layer and the insulating layer. The device may further include a reference layer having a fixed magnetization direction on a side of the free layer opposite the insulating layer and a tunnel barrier between the reference layer and the free layer. Related fabrication methods are also described.

Claims5

Dependent claims

A magnetic memory device, comprising:

a guide layer on a substrate;
a diffusion barrier layer on the guide layer;
an insulating layer on the diffusion barrier layer;
a conductive layer on the insulating layer, the conductive layer having a portion removed to expose the insulating layer;
at least one conductive bridge passing through the insulating layer and electrically connected to the guide layer;
a free layer on the exposed insulating layer having the at least one conductive bridge passing therethrough;
a tunnel barrier layer on the free layer;
and
a reference layer on the tunnel barrier layer.

6 more elements

Dependencies are inferred from the claim text.

Magnetic memory devices with thin conductive bridges

Life of this patent

Magnetic memory devices with thin conductive bridges

Life of this patent

Abstract

Claims5