Solid-state image pick-up device and manufacturing method thereof, image-pickup apparatus, semiconductor device and manufacturing method thereof, and semiconductor substrate
AssigneeSony Corporation
InventorShin Iwabuchi
Life of this patent
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Abstract
A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer.
Claims10
A solid-state image pick-up device comprising:
- a semiconductor substrate main body which includes an element forming layer and a gettering layer provided on an upper layer thereof;
- photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer;
- and
- a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer, wherein the dielectric film has a negative fixed charge.
An image pick-up apparatus comprising:
- a solid-state image pick-up device including a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof;
- photoelectric conversion elements, each of which includes a first conductive type region, formed in the element forming layer;
- a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer, wherein the dielectric film has a negative fixed charge;
- an optical system for guiding incident light from an object to the solid-state image pick-up device;
- and
- a signal processing circuit for processing an output signal from the solid-state image pick-up device.
A semiconductor device comprising:
- a semiconductor substrate main body which includes an element forming layer and a gettering layer provided on an upper layer of the element forming layer;
- a device which includes a first conductive type region and is formed in the element forming layer;
- and
- a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer, wherein the dielectric film has a negative fixed charge.
A semiconductor substrate comprising:
- a semiconductor substrate main body which includes an element forming layer in which a device including a first conductive type region is provided and a gettering layer provided on an upper layer of the element forming layer;
- and
- a dielectric film which is provided on an upper layer of the gettering layer and which induced a second conductive type region in a surface of the gettering layer, wherein the dielectric film has a negative fixed charge.
Dependencies are inferred from the claim text.