Semiconductor device and method for manufacturing same

A semiconductor device comprising:

• a compound semiconductor substrate;
• a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer;
• a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer;
• and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer;
• and
• a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer,
• wherein the second conductivity type-channel field-effect transistor region includes a backgate electrode, and
• wherein the backgate electrode of the second conductivity type-channel field-effect transistor is formed on the first conductivity type first barrier layer.

A semiconductor device manufacturing method, comprising the steps of:

• forming a multilayered film by the sequential epitaxial growth of a first buffer layer, a first channel layer, a first conductivity type first barrier layer, a second buffer layer, a second conductivity type second channel layer, and a first conductivity type gate layer on a compound semiconductor substrate;
• selectively removing the first conductivity type gate layer to form a first conductivity type gate region for a second conductivity type-channel field-effect transistor;
• selectively removing the second conductivity type second channel layer so as to lay out a second conductivity type-channel field-effect transistor region in which the second conductivity type second channel layer remains with the first conductivity type gate region, and a first conductivity type-channel field-effect transistor region in which the first conductivity type first barrier layer remains;
• forming an insulating film simultaneously on exposed surfaces of the second conductivity type-channel field-effect transistor region and the first conductivity type-channel field-effect transistor region, and forming first opening portions through the insulating film;
• diffusing impurities through the first opening portions to simultaneously form source and drain regions for the second conductivity type-channel field-effect transistor, and a gate region for a first conductivity type-channel field-effect transistor;
• forming an element isolation region that electrically separates the second conductivity type-channel field-effect transistor region and the first conductivity type-channel field-effect transistor region from each other;
• and
• forming a metal electrode in the source and drain regions for the second conductivity type-channel field-effect transistor, and in the gate region for the first conductivity type-channel field-effect transistor.

A semiconductor device manufacturing method, comprising the steps of:

• forming a multilayered film by the sequential epitaxial growth of a first buffer layer, a second conductivity type second channel layer, a first conductivity type gate layer, a first conductivity type second barrier layer, a first channel layer, and a first conductivity type first barrier layer on a compound semiconductor substrate;
• forming an element isolation region that electrically separates a second conductivity type-channel field-effect transistor region and a first conductivity type-channel field-effect transistor region from each other;
• selectively removing the first conductivity type first barrier layer, the first channel layer, and the first conductivity type second barrier layer of the second conductivity type-channel field-effect transistor region;
• selectively removing the first conductivity type gate layer of the second conductivity type-channel field-effect transistor region to form a first conductivity type gate region for a second conductivity type-channel field-effect transistor;
• forming an insulating film simultaneously on exposed surfaces of the second conductivity type-channel field-effect transistor region and the first conductivity type-channel field-effect transistor region, and forming opening portions through the insulating film;
• diffusing impurities through the opening portions to simultaneously form source and drain regions for the second conductivity type-channel field-effect transistor, and a gate region for a first conductivity type-channel field-effect transistor;
• and
• forming a metal electrode in the source and drain regions for the second conductivity type-channel field-effect transistor, and in the gate region for the first conductivity type-channel field-effect transistor.