Direct growth of diamond in backside vias for GaN HEMT devices
AssigneeNorthrop Grumman Systems Corporation
InventorsVincent Gambin, Rajinder Sandhu, Benjamin Poust, Michael Wojtowicz
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Abstract
A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.
Claims20
A semiconductor device comprising:
- a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided at least partially within the via in the substrate;
- a plurality of GaN epitaxial layers grown directly on the top surface of the substrate;
- and
- a plurality of device layers grown on the epitaxial layers.
A GaN high electron mobility transistor (HEMT) device comprising:
- a silicon carbide substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate;
- a plurality of GaN epitaxial layers grown directly on the top surface of the substrate;
- a plurality of device layers grown on the epitaxial layers;
- and
- a diamond layer provided within the via.
A semiconductor device comprising:
- a substrate including a top surface and a bottom surface, said substrate further including a via formed through the bottom surface and into the substrate, wherein diamond is provided within the via in the substrate;
- a plurality of GaN epitaxial layers grown directly on the top surface of the substrate, wherein the via extends completely through the substrate and into at least one of the epitaxial layers;
- and
- a plurality of device layers grown on the epitaxial layers.
Dependencies are inferred from the claim text.