Non-planar quantum well device having interfacial layer and method of forming same

A non-planar quantum well device, comprising:

• a quantum well structure having a substrate, a IV or III-V material barrier layer, and a quantum well layer that includes a channel region;
• a fin structure that (a) is formed in the quantum well structure and, (b) includes the quantum well layer;
• an interfacial layer provided over the fin structure;
• a high-k layer provided over the interfacial layer;
• and
• gate metal provided across the fin structure.

A system comprising:

• a processor comprising:
• a quantum well structure having a substrate, a IV or III-V material barrier layer, a doping layer, and a quantum well layer that includes a channel region;
• a fin structure that (a) is formed in the quantum well structure and, (b) includes the quantum well layer;
• an interfacial layer provided over the fin structure;
• a high-k layer provided over the interfacial layer;
• gate metal deposited across the fin structure over the high-k layer;
• drain and source regions formed at respective ends of the fin structure;
• a contact;
• and
• a memory coupled to the processor.