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AssigneesNTT Electronics Corporation, Nippon Telegraph and Telephone Corporation
InventorsTadao Ishibashi, Seigo Ando, Yoshifumi Muramoto, Fumito Nakajima, Haruki Yokoyama
Estimating the term…
An electron injected APD with an embedded n electrode structure in which edge breakdown can be suppressed without controlling the doping profile of an n-type region of the embedded n electrode structure with high precision. The APD comprising a buffer layer with a low ionization rate is inserted between an n electrode connecting layer and an avalanche multiplication layer. Specifically, the APD is an electron injected APD in which an n electrode layer, the n electrode connecting layer, the buffer layer, the avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer are sequentially stacked, and a light absorbing portion that includes at least the low-concentration light absorbing layer and the p-type light absorbing layer forms a mesa shape.
An avalanche photodiode that forms a stack structure sequentially including an n electrode layer, an n electrode connecting layer, an avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer,
An avalanche photodiode that comprises a stack structure sequentially including an n electrode layer, an n electrode connecting layer, an avalanche multiplication layer, an electric field control layer, a band gap gradient layer, a low-concentration light absorbing layer, a p-type light absorbing layer, and a p electrode layer,
Dependencies are inferred from the claim text.