Bidirectional shockley diode with extended mesa
AssigneeSTMicroelectronics (Tours) SAS
InventorsYannick Hague, Samuel Menard
Life of this patent
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Abstract
A mesa-type bidirectional Shockley diode including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of said regions of the first conductivity type, each buried region being complementary in projection with the other; and a groove arranged in the vicinity of the periphery of the component on each of its surfaces, the component portion external to the groove comprising, under the external portion of the upper and lower regions of the second conductivity type, regions of the first conductivity type of same doping profile as said buried regions.
Claims20
A mesa-type bidirectional Shockley diode, comprising:
- a substrate of a first conductivity type;
- first and second layers of a second conductivity type on each side of the substrate;
- regions of the first conductivity type in each of the first and second layers of the second conductivity type;
- first buried regions of the first conductivity type vertically adjacent to each of said regions of the first conductivity type and located at interfaces between the substrate and the first and second layers of the second conductivity type;
- first and second grooves arranged in the vicinity of the periphery of the diode on each of its surfaces, the grooves penetrating into the substrate;
- and
- an external portion of the diode external to the grooves comprising, adjacent to the first and second layers of the second conductivity type on each side of the substrate, external buried regions of the first conductivity type of a same doping profile as said first buried regions.
A bidirectional Shockley diode comprising:
- a substrate of a first conductivity type;
- a first layer of a second conductivity type at a first side of the substrate and a second layer of the second conductivity type at a second side of the substrate;
- a first groove at the first side of the substrate and a second groove at the second side of the substrate, each groove extending into the substrate and extending around the diode inside of a periphery of the diode;
- and
- an external portion of the diode outside of the first and second grooves, wherein the external portion includes a first external buried region of the first conductivity type at the first side of the substrate extending from the first layer of the second conductivity type into the substrate.
Dependencies are inferred from the claim text.