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US 8,575,643 B2Granted
Light-emitting device
AssigneeSony Corporation
InventorsYoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Tatsuo Ohashi
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AssigneeSony Corporation
InventorsYoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Tatsuo Ohashi
Estimating the term…
A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.
A light-emitting device comprising:
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00:…
Packages: interconnections, e.g. lead-frames, bond wires or solder balls
Shapes of wire connectors: the connected ends being ball-shaped
Comprising metals or metalloids, e.g. silver: comprising gold [Au]
About 2 years 8 months of term left · ends 13 Jun 2029 (estimated)
The present invention contains subject matter related to Japanese Patent Application JP 2006-288422 filed in the Japanese Patent Office on Oct. 24, 2006, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a light-emitting device.
FIGS. 1A and 1B are schematic end views of a light-emitting device according to a first embodiment of the present invention, taken along arrows A-A and B-B, respectively, in FIG. 2;
FIG. 2 is a schematic plan view of the light-emitting device (light-emitting diode) of the first embodiment;
FIG. 3A is a schematic partial plan view and FIGS. 3B and 3C are schematic partial end views, for illustrating a method for manufacturing the light-emitting device (light-emitting diode) of the first embodiment;
The present invention will be described on the basis of embodiments with reference to the drawings.
First Embodiment
A first embodiment of the present invention relates to a light-emitting device. The light-emitting device according to the first embodiment includes a light-emitting diode including a GaN compound semiconductor layer. FIG. 2 is a schematic plan view, and FIGS. 1A and 1B are schematic end views taken along arrows IA-IA and IB-IB, respectively, in FIG. 2. As shown in the drawings, the light-emitting device includes the following: