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US 8,575,638 B2Granted
Light emitting device
AssigneeLG Innotek Co., Ltd.
InventorHwanHee Jeong
Life of this patent
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Abstract
A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers, an insulating layer contacting a lower surface of the light emitting structure, and a protective layer disposed beneath the light emitting structure, and formed with a pattern at which the insulating layer is arranged.
Claims18
A light emitting device, comprising:
- a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers;
- an insulating layer contacting a underside of the light emitting structure;
- and
- a protective layer disposed below the light emitting structure, and formed with a pattern at which the insulating layer is arranged,
- wherein the pattern includes at least one groove, and
- wherein the groove has a depth of at least one groove corresponding to 0.3 to 0.7 times a thickness of the protective layer.
3 more elements
A light emitting device, comprising:
- a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers;
- a protective layer formed with at least two protrusions contacting the first semiconductor layer;
- and
- an insulating layer disposed between the at least two protrusions and contacting the first semiconductor layer,
- wherein a height of the at least two protrusions corresponds to 0.3 to 0.7 times a thickness of the protective layer.
2 more elements
A light emitting device, comprising:
- a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers;
- an insulating layer contacting a portion on a underside of the first semiconductor layer;
- and
- a protective layer disposed below the first semiconductor layer and contacting the portion of the first semiconductor layer,
- wherein a thickness of the insulating layer corresponds 0.3 to 0.7 times a thickness of the protective layer.
2 more elements
Dependencies are inferred from the claim text.