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AssigneesSony Corporation, Tohoku University
InventorsHideki Watanabe, Takao Miyajima, Masao Ikeda, Hiroyuki Yokoyama, Tomoyuki Oki, Masaru Kuramoto
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A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
A bi-section semiconductor laser device comprising:
A bi-section semiconductor laser device comprising:
Dependencies are inferred from the claim text.