Thin film transistor substrate and method for manufacturing the same
AssigneeLG Display Co., Ltd.
InventorKiTae Kim
Life of this patent
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Abstract
A thin film transistor substrate and a method for manufacturing the same are discussed, in which the thin film transistor comprises a gate line and a data line arranged on a substrate to cross each other; a gate electrode connected with the gate line below the gate line; an active layer formed on the gate electrode; an etch stopper formed on the active layer; an ohmic contact layer formed on the etch stopper; source and drain electrodes formed on the ohmic contact layer; and a pixel electrode connected with the drain electrode. It is possible to prevent a crack from occurring in the gate insulating film during irradiation of the laser and prevent resistance of the gate electrode from being increased.
Claims6
A thin film transistor substrate comprising:
- a gate line and a data line arranged on a substrate to cross each other;
- a gate electrode connected with the gate line below the gate line;
- an active layer formed on the gate electrode;
- a gate insulating film between the gate electrode and the active layer;
- an etch stopper formed on the active layer;
- an ohmic contact layer formed on the etch stopper;
- source and drain electrodes formed on the ohmic contact layer;
- and
- a pixel electrode connected with the drain electrode,
- wherein a first portion of the gate electrode is formed directly under the gate line and a second portion of the gate electrode is formed directly under the gate insulating film.
Dependencies are inferred from the claim text.