Display device
AssigneeSharp Kabushiki Kaisha
InventorNaoki Makita
Life of this patent
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Abstract
A semiconductor device 100 includes a thin-film transistor 123 and a thin-film diode 124. The thin-film transistor 123 includes a semiconductor layer S1 with a channel region 114, a source region and a drain region 112, a gate electrode 109 that controls the conductivity of the channel region 114, and a gate insulating film 108 arranged between the semiconductor layer and the gate electrode 109. The thin-film diode 124 includes a semiconductor layer S2 with at least an n-type region 113 and a p-type region 117. The respective semiconductor layers S1 and S2 of the thin-film transistor 123 and the thin-film diode 124 are portions of a single crystalline semiconductor layer, obtained by crystallizing the same crystalline semiconductor film, but have been crystallized to mutually different degrees.
Claims4
A display device comprising:
- a display area with a number of display sections;
- and
- a frame area surrounding the display area,
- wherein the display device further includes at least one photosensor section with a thin-film diode, and
- wherein each said display section includes an electrode and a thin-film transistor connected to the electrode, and
- wherein the thin-film transistor and the thin-film diode are arranged on the same light-transmitting substrate, and
- wherein the thin-film transistor includes:
- a semiconductor layer with a channel region, a source region and a drain region;
- a gate electrode that controls the conductivity of the channel region;
- and a gate insulating film arranged between the semiconductor layer and the gate electrode, and
- wherein the thin-film diode includes a semiconductor layer with an n-type region, a p-type region and an intrinsic region interposed between the n- and p-type regions, and
- wherein the respective semiconductor layers of the thin-film transistor and the thin-film diode are portions of a single crystalline semiconductor layer that has been crystallized or re-crystallized by irradiating the same amorphous semiconductor film with a laser beam, and
- wherein the channel region of the semiconductor layer of the thin-film transistor and the intrinsic region of the semiconductor layer of the thin-film diode have been crystallized to mutually different degrees, and
- wherein the channel region of the semiconductor layer of the thin-film transistor has a greater average surface roughness Ra than the intrinsic region of the semiconductor layer of the thin-film diode, and
- wherein the thin-film diode further includes a heat sink layer that is located between the semiconductor layer of the thin-film diode and the substrate, made of an opaque material, and arranged so as to overlap with at least the intrinsic region of the semiconductor layer of the thin-film diode when viewed from under the back surface of the substrate.
Dependencies are inferred from the claim text.