Organic light-emitting display device and method of manufacturing the same

An organic light-emitting display device comprising:

• an activation layer formed on a substrate and a first capacitor electrode that is formed on the same plane as the activation layer and is horizontally spaced apart from the activation layer;
• a first insulating layer at least partially covering the activation layer and the first capacitor electrode;
• a gate electrode formed on the first insulating layer and a connection electrode comprising the same material on the same plane as the gate electrode, wherein the connection electrode is horizontally spaced apart from the gate electrode and electrically connects between the activation layer and the first capacitor electrode;
• a second insulating layer at least partially covering the gate electrode and the connection electrode;
• source and drain electrodes formed on the second insulating layer;
• a second capacitor electrode comprising the same material on the same plane as the source and drain electrodes, wherein the second capacitor is horizontally spaced apart from the source and drain electrodes;
• and
• an organic light-emitting device comprising a pixel electrode electrically connected to the source and drain electrodes, an emissive layer, and an opposite electrode, wherein the emissive layer is interposed between the pixel electrode and the opposite electrode,
• wherein the activation layer comprises polycrystalline silicon, and wherein the first capacitor electrode comprises amorphous silicon.

An organic light-emitting display device comprising:

• a pixel area comprising a plurality of pixels, wherein each of the pixels comprises a thin-film transistor, an organic light-emitting device electrically connected to the thin-film transistor, and a storage capacitor horizontally spaced apart from the thin-film transistor while electrically connected to the thin-film transistor;
• and
• a circuit area located outside the pixel area and comprising electrical circuits for supplying electric power and data signals to the pixel area,
• wherein a semiconducting layer in the circuit area comprises polycrystalline silicon in the entire semiconductor layer;
• wherein a semiconducting layer in the pixel area comprises a polycrystalline silicon portion and an amorphous silicon portion.

A method of manufacturing an organic light-emitting display device, the method comprising:

• providing a semiconducting layer amorphous silicon over a substrate;
• selectively crystallizing a portion of the semiconducting layer to provide a polycrystalline silicon portion and an amorphous silicon portion;
• patterning the semiconducting layer to form an activation layer and a first capacitor electrode, the activation layer comprising the polycrystalline silicon portion, the first capacitor electrode comprising the amorphous silicon portion;
• forming a first insulating layer over the activation layer and the first capacitor electrode.

A method of manufacturing an organic light-emitting display device, the method comprising:

• providing an unfinished organic light-emitting display device comprising a pixel area and a circuit area outside the circuit area, wherein both the pixel area and the circuit area comprises an amorphous silicon layer;
• when crystallizing the amorphous silicon layer of the circuit area, continuously applying a laser beam to the circuit area;
• and
• when crystallizing the amorphous silicon layer of the pixel area, applying a laser beam to a portion of the amorphous silicon layer of the pixel area while not applying a laser beam to another portion of the amorphous silicon layer of the pixel area.