Light emitting diode having a barrier layer with a superlattice structure
AssigneeSeoul Opto Device Co., Ltd.
InventorsChung Hoon Lee, Ki Bum Nam, Dae Sung Kal
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Abstract
A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
Claims17
A light emitting diode (LED), comprising non-polar GaN-based semiconductor layers grown on a non-polar substrate,
- wherein the non-polar GaN-based semiconductor layers comprise:
- a non-polar N-type semiconductor layer;
- a non-polar P-type semiconductor layer;
- and
- non-polar active region layers positioned between the non-polar N-type semiconductor layer and the non-polar P-type semiconductor layer,
- wherein the non-polar active region layers comprise a well layer and a barrier layer,
- wherein the P-type semiconductor layer comprises a P-type clad layer positioned on the active region layers, an undoped layer interposed between the uppermost layer of the non-polar active region layers and the P-type clad layer, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer.
Dependencies are inferred from the claim text.