Semiconductor light emitting device and fabrication method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Heon Han, Jong Hyun Lee, Jin Young Lim, Dong Ju Lee, Heon Ho Lee, Young Sun Kim, Sung Tae Kim
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Abstract
A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.
Claims22
A semiconductor light emitting device, comprising:
- first and second conductivity-type semiconductor layers;
- and
- an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed,
- wherein the quantum well layer includes InxGa(1-x)N (0≦x≦1) and the quantum barrier layer includes AlyInzGa(1-y-z)N (0≦y≦1, 0≦z<1),
- the quantum barrier layer includes first and second regions disposed in order toward the first conductivity-type semiconductor layer such that no quantum well layer is disposed between the first region and the second region, wherein, in the first region, the content of indium (In) is reduced at a first slope in a direction toward the second conductivity-type semiconductor layer and, in the second region, the content of indium (In) is increased at a second slope in a direction toward the second conductivity-type semiconductor layer, and
- the quantum barrier layer includes third and fourth regions interposed between the first and second regions and disposed in order toward the first conductivity-type semiconductor layer, wherein, in the third region, the content of indium (In) is reduced at a third slope that has an absolute value smaller than an absolute value of the first slope, in a direction toward the second conductivity-type semiconductor layer, and in the fourth region, the content of indium (In) is increased at a fourth slope that has an absolute value smaller than an absolute value of the second slope, in the direction toward the second conductivity-type semiconductor layer.
A method for fabricating a semiconductor light emitting device, the method comprising:
- forming a first conductivity-type semiconductor layer on a substrate;
- forming an active layer, having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, on the first conductivity-type semiconductor layer;
- and
- forming a second conductivity-type semiconductor layer on the active layer, wherein the quantum well layer includes InxGa(1-x)N (0<x<1) and the quantum barrier layer includes AlyInzGa(1-y-z)N (0≦y≦1, 0≦z<1), and
- the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer such that no quantum well layer is disposed between the first region and the second region, wherein, in the first region, the content of indium (In) is reduced at a first slope in a direction toward the second conductivity-type semiconductor layer and, in the second region, the content of indium (In) is increased at a second slope in a direction toward the second conductivity-type semiconductor layer, and
- the quantum barrier layer includes third and fourth regions interposed between the first and second regions and disposed in order toward the first conductivity-type semiconductor layer, wherein, in the third region, the content of indium (In) is reduced at a third slope that has an absolute value smaller than an absolute value of the first slope, in a direction toward the second conductivity-type semiconductor layer, and in the fourth region, the content of indium (In) is increased at a fourth slope that has an absolute value smaller than an absolute value of the second slope, in the direction toward the second conductivity-type semiconductor layer.
Dependencies are inferred from the claim text.