Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses

A Group III nitride based light emitting diode, comprising:

• an n-type Group III nitride based semiconductor layer;
• a p-type Group III nitride based semiconductor layer forming a P-N junction with the n-type Group III nitride based semiconductor layer;
• and
• a Group III nitride based active region comprising a plurality of sequentially stacked Group III nitride based wells including respective well layers adjacent the P-N junction;
• wherein the plurality of well layers comprises a first well layer having a first thickness and a second well layer having a second thickness, the second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness;
• wherein, in response to being energized, the light emitting diode emits light having a full width half maximum (FWHM) that is less than about 30 nm.

A Group III nitride based light emitting diode, comprising:

• a p-type Group III nitride based semiconductor layer;
• an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer;
• and
• a Group III nitride based active region on the n-type Group III nitride based semiconductor layer, the active region comprising a plurality of sequentially stacked Group III nitride based wells including respective well layers;
• wherein the plurality of well layers comprises a first well layer having a first thickness and a second well layer having a second thickness that is greater than the first thickness;
• and
• wherein, in response to being energized, the light emitting diode emits light having a full width half maximum (FWHM) that is less than about 30 nm.

A Group III nitride based light emitting diode, comprising:

• a first light emitting well layer having a first thickness and configured to generate light having a first dominant wavelength when energized by passing electric current therethrough;
• and
• a second light emitting well layer having a second thickness that is different from the first thickness and that is configured to generate light having a second dominant wavelength when energized by passing electric current therethrough;
• wherein the first dominant wavelength is no more than about 10 nm different from the second dominant wavelength.