Phase change memory cell with heater and method therefor
AssigneeFreescale Semiconductor, Inc.
InventorsLeo Mathew, Dharmesh Jawarani, Tushar P. Merchant, Ramachandran Muralidhar
Life of this patent
Estimating the term…
Abstract
A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at least a portion of the silicide structure. The phase change structure exhibits a first resistive value when in a first phase state and exhibits a second resistive value when in a second phase state. The silicide structure produces heat when current flows through the silicide structure for changing the phase state of the phase change structure.
Claims15
A circuit including a phase change memory device, the circuit comprising:
- a phase change memory cell, the phase change memory cell including:
- a phase change memory structure, the phase change memory structure including material over an insulating layer, the material exhibiting a first resistive value when in a first phase state and exhibiting a second resistive value when in a second phase state;
- a heater electrically coupled to the phase change memory structure, wherein the heater includes a silicide structure for producing heat when current flows through the silicide structure for changing a phase state of the phase change memory structure,
- wherein:
- the silicide structure having a bottom surface directly on the insulating layer and a top surface above the bottom surface that comprises a first silicided region narrowing to a first pointed edge extending from the bottom surface directly on the insulating layer to the top surface and a second silicided region narrowing to a second pointed edge extending from the bottom surface directly on the insulating layer to the top surface, wherein the first and second pointed edges are in parallel and are vertical with respect to the bottom surface;
- the first pointed edge is separated from the second pointed edge;
- the first pointed edge and the second pointed edge contact the phase change memory structure;
- and
- current flows from the first pointed edge to the second pointed edge for producing the heat.
A circuit including a phase change memory device, the circuit comprising:
- a phase change memory cell, the phase change memory cell including:
- a phase change memory structure, the phase change memory structure over an insulating layer, the phase change memory structure including material exhibiting a first resistive value when in a first phase state and exhibiting a second resistive value when in a second phase state;
- and
- a heater electrically coupled to the phase change memory structure, wherein the heater includes a silicide structure having a bottom surface directly on the insulating layer and a top surface above the bottom surface for producing heat when current flows through the silicide structure for changing a phase state of the phase change memory structure,
- wherein:
- the silicide structure comprises a first silicided region narrowing to a first pointed edge running vertically from the bottom surface directly on the insulating layer to the top surface and a second silicided region narrowing to a second pointed edge running vertically from the bottom surface directly on the insulating layer to the top surface;
- the first pointed edge is separated from the second pointed edge;
- the heater is directly connected to the phase change memory through the first pointed edge and the second pointed edge;
- and
- current flows from the first pointed edge to the second pointed edge for producing the heat.
Dependencies are inferred from the claim text.