US 8,575,587 B2Granted

Storage device and method of manufacturing the same

AssigneeKabushiki Kaisha Toshiba

InventorsKoji Asakawa, Shigeki Hattori, Hideyuki Nishizawa, Satoshi Mikoshiba, Reika Ichihara, Masaya Terai

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Abstract

A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.

Claims19

Dependent claims

A storage device comprising:

a plurality of A-wirings;
a plurality of B-wirings crossing the A-wirings;
a first via plug formed between a first B-wiring and two adjacent A-wirings consisting of a first A-wiring and a second A-wiring, a maximum diameter of the first via plug at a bottom surface, which is facing the A-wirings in a direction vertical to an extending direction of the A-wirings, is smaller than a length corresponding to a pitch of the A-wirings plus a width of the A-wirings;
a first storage element formed between the first via plug and the first A-wiring;
a second storage element formed between the first via plug and the second A-wiring;
a second via plug formed between a second B-wiring adjacent to the first B-wiring and two adjacent A-wirings consisting of the second A-wiring and a third A-wiring, a maximum diameter of the second via plug at a bottom surface, which is facing the A-wirings in a direction vertical to the extending direction of the A-wirings, is smaller than the length corresponding to the pitch of the A-wirings plus the width of the A-wirings;
a third storage element formed between the second via plug and the second A-wiring;
and
a fourth storage element formed between the second via plug and the third A-wiring.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/236,793Filed 20 Sep 2011
Priority: JP 2011-0491847 Mar 2011
Published: US 2012/0228576 A113 Sep 2012
Granted: 5 Nov 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10K 10/50
Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers:…
G11C 13/0014
RRAM elements whose operation depends upon chemical change: comprising cells based on organic memory material
G11C 13/003
Auxiliary circuits: cell access
G11C 2213/72
Resistive array aspects: array wherein the access device being a diode