Resistive memory device and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorYu-Jin Lee
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Abstract
A resistive memory device and a method for manufacturing the same are disclosed. The resistive memory device includes a lower electrode formed over a substrate, a resistive layer disposed over the lower electrode, an upper electrode formed over the resistive layer, and an oxygen-diffusion barrier pattern provided in an interface between the resistive layer and the upper electrode. The above-described resistive memory device and a method for manufacturing the same may prevent the out diffusion of oxygen in the interface of the upper electrode to avoid set-stuck phenomenon occurring upon the operation of the resistive memory device, thereby improving the endurance of the resistive memory device.
Claims13
A resistive memory device, comprising:
- a lower electrode formed over a substrate;
- a resistive layer disposed over the lower electrode;
- an upper electrode formed over the resistive layer;
- and
- an oxygen-diffusion barrier pattern formed between the resistive layer and the upper electrode,
- wherein the oxygen-diffusion barrier pattern is formed to be buried in the resistive layer at an upper surface of the resistive layer and is formed of a metal material, and the upper surface of the resistive layer forms a contact area between the upper electrode and the oxygen-diffusion barrier pattern.
A resistive memory device, comprising:
- a lower electrode formed over a substrate;
- a resistive layer disposed over the lower electrode;
- an upper electrode formed over the resistive layer;
- and
- an oxygen-diffusion barrier pattern formed between the resistive layer and the upper electrode, wherein the oxygen-diffusion barrier pattern is buried in the resistive layer at an upper surface of the resistive layer and is formed of a metal material, the resistive layer is formed of a perovskite-based material, and the upper surface of the resistive layer forms a contact area between the upper electrode and the oxygen-diffusion barrier pattern.
Dependencies are inferred from the claim text.