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US 8,575,585 B2Granted
Memristive device
AssigneeHewlett-Packard Development Company, L.P.
InventorsJianhua Yang, Qiangfei Xia, Alexandre M. Bratkovski
Life of this patent
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Abstract
A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
Claims15
A memristive device, comprising:
- a first electrode;
- a second electrode crossing the first electrode at a non-zero angle;
- an active region disposed between the first and second electrodes;
- and
- a continuous gradient of a single type of defect formed in the active region, the continuous gradient including an increasing or decreasing concentration of the single type of defect along a thickness of the entire active region.
2 more elements
A method for making a memristive device, the method comprising:
- forming an active region including multiple metal oxide layers, multiple metal nitride layers, or multiple metal sulfide layers, wherein a cycle to form one of the multiple metal oxide layers, one of the multiple metal nitride layers, or one of the multiple metal sulfide layers includes:
- exposing a surface of an electrode to a pulse of a metal precursor;
- exposing the surface to one of an oxygen precursor, a nitride precursor, or a sulfide precursor;
- and
- controlling a temperature at which the exposing steps take place, thereby controlling a concentration of a single type of defect throughout a thickness of the one metal oxide layer, the one metal nitride layer, or the one metal sulfide layer;
- and
- varying the temperature continuously at each cycle to form a continuous gradient of the single type of defect in the active region, the continuous gradient including an increasing or decreasing concentration of the single type of defect along a thickness of the entire active region.
4 more elements
A method for making a memristive device, the method comprising:
- exposing a surface of an electrode to a pulse of a metal precursor;
- exposing the surface to one of an oxygen precursor, a nitride precursor, or a sulfide precursor, thereby forming one of a metal oxide layer, a metal nitride layer, or a metal sulfide layer having a predetermined amount of defects therein;
- and
- controlling a temperature at which the exposing steps take place, thereby controlling a concentration of the defects throughout a thickness of the one of the metal oxide layer, the metal nitride layer, or the metal sulfide layer;
- wherein the metal precursor is a titanium precursor having a chemical formula of C16H40N4Ti.
2 more elements
A crossbar array, comprising:
- a first set of at least two parallel electrodes;
- a second set of at least two parallel electrodes crossing the first set of at least two parallel electrodes at a non-zero angle;
- a junction formed at each point where one of the at least two parallel electrodes in the first set crosses one of the at least two parallel electrodes in the second set;
- an active region disposed in each junction;
- and
- a continuous gradient of a single type of defect formed in each of the active regions, the continuous gradient including an increasing or decreasing concentration of the single type of defect along a thickness of the entire active region.
3 more elements
Dependencies are inferred from the claim text.