Ion implanting system

An ion implanting system, comprising:

• an ion generating system to generate ion beams;
• and
• an ion implanting chamber configured to receive a work-piece to be irradiated with the ion beams generated from the ion generating system and to receive the ion beams generated from the ion generating system,
• wherein the ion implanting chamber comprises a work-piece transfer guiding unit to guide the work-piece through the ion implanting chamber in a direction that is perpendicular to an implantation direction of the ion beams,
• wherein the ion generating system comprises a first set of ion generators to irradiate ions to a first portion of the work-piece as the work-piece moves through the ion implanting
• chamber and a second set of ion generators to irradiate ions to a second portion of the work-piece as the work-piece moves through the ion implanting chamber,
• wherein the first set of ion generators and the second set of ion generators are configured to generate the ion beams such that the first portion of the work-piece irradiated with first ion beams generated from the first set of ion generators and the second portion of the work-piece irradiated with second ion beams generated from the second set of ion generators do not overlap each other, and
• wherein an orientation of the received work-piece is fixed with respect to the first ion generating unit and the second ion generating unit as the work-piece moves through the ion implanting chamber.