Image sensor array for back side illumination with global shutter using a junction gate photodiode
AssigneeAptina Imaging Corporation
InventorsJaroslav Hynecek, Hirofumi Komori
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AssigneeAptina Imaging Corporation
InventorsJaroslav Hynecek, Hirofumi Komori
Estimating the term…
The present invention provides a junction gate photo-diode (JGP) pixel that includes a JGP accumulating charge in response to impinging photons. The JGP is positioned on a substrate and includes a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer. Also includes is a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier. Also includes is a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD. The PB temporarily blocks charge transfer between the JGP and the FD, and the SG stores the accumulated charge from the JGP, and transfers the stored charge to the FD for readout.
A junction gate photo-diode (JGP) pixel, comprising:
A method for controlling a junction gate photo-diode (JGP) pixel, the pixel comprising a JGP, the JGP positioned on a substrate including a top n layer, a middle p layer and a bottom n layer forming a n-p-n junction, and a control terminal coupled to the top n layer, a floating diffusion (FD) positioned on the substrate and coupled to a pixel output line through an amplifier, a pinned barrier (PB) and a storage gate (SG) positioned on the substrate between the JGP and the FD, a clearing gate (CG) positioned on the substrate adjacent to the JGP, a reset gate positioned on the substrate and coupled to the FD, and a controller, the method comprising:
A method for forming a junction gate photo-diode (JGP) pixel on a substrate, the method comprising:
Dependencies are inferred from the claim text.