Lattice matched semiconductor growth on crystalline metallic substrates

A method of fabricating an electronic device comprising:

• providing one of a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a);
• growing a first crystalline semiconductor alloy layer on the crystalline surface of the substrate by coincident site lattice matched epitaxy, without any buffer layer between the first semiconductor alloy layer and the crystalline surface of the substrate, wherein the first semiconductor alloy layer is prepared to have a lattice parameter (a′) that is related to the lattice parameter (a);
• epitaxially growing a second crystalline semiconductor alloy layer on the first semiconductor alloy layer;
• preparing the first semiconductor alloy to have a lattice parameter (a′) which is related to the substrate lattice parameter by one of;
• 2(a), (a)/2, √2(a) and (a)/√2;
• and
• preparing the second crystalline semiconductor alloy to have a lattice parameter (a″) which is related to the lattice parameter (a′) by one of, 2(a′), (a′)/2, √2(a′) and (a′)/√2.