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US 8,575,039 B2Granted
Surface treating method and film depositing method
AssigneeTokyo Electron Limited
InventorsTatsuya Yamaguchi, Hiroyuki Hashimoto
Life of this patent
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Abstract
A surface treating method for treating a surface of a substrate inside a process chamber includes the steps of generating an atmosphere containing no moisture in the process chamber, heating the substrate inside the atmosphere containing no moisture in the process chamber; and causing a reaction between the substrate and an adhesion accelerating agent by feeding the adhesion accelerating agent gas into the process chamber.
Claims8
A surface treating method for treating a surface of a substrate inside a process chamber;
- the method comprising the steps of:
- generating an atmosphere containing no moisture in the process chamber;
- heating the substrate inside the atmosphere containing no moisture in the process chamber;
- and
- causing a reaction between the substrate and an adhesion accelerating agent by feeding the adhesion accelerating agent gas into the process chamber,
- wherein the process chamber is a container that deposits a film on the substrate by having a source gas fed therein, and
- wherein the step of causing the reaction between the substrate and the adhesion accelerating agent includes feeding the adhesion accelerating agent gas into the process chamber until the substrate is heated to a predetermined temperature for depositing the film and treating the surface of the substrate with the adhesion accelerating agent gas.
4 more elements
A film depositing method comprising the steps of:
- generating an atmosphere containing no moisture in a film deposition chamber for depositing a film on a substrate;
- supplying an adhesion accelerating agent gas into the film deposition chamber until the substrate is heated to a predetermined temperature for depositing the film;
- treating a surface of the substrate with the adhesion accelerating agent gas inside the atmosphere containing no moisture in the film deposition chamber;
- and
- depositing the film on the substrate by feeding a source gas into the film deposition chamber after the step of treating the surface of the substrate.
2 more elements
Dependencies are inferred from the claim text.