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US 8,575,038 B2Granted
Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film
AssigneeNational Institute for Materials Science
InventorsNaoto Umezawa, Toyohiro Chikyo, Toshihide Nabatame
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Abstract
To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconducdor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.
Claims10
A method for reducing a thickness of an interfacial layer, comprising:
- (a) forming an oxide film of a semiconductor as the interfacial layer on a semiconductor;
- (b) forming a film of an oxide of a first metal on the interfacial layer;
- (c) increasing the thickness of the interfacial layer by annealing;
- and
- (d) forming a film of an oxide of a second metal on the film of the oxide of the first metal to reduce the thickness of the interfacial layer, where the second metal has higher valency than that of the first metal.
2 more elements
A method for forming a high dielectric constant gate insulating film, comprising:
- forming a high dielectric constant gate insulating film using a method for reducing a thickness of an interfacial layer,
- wherein the method for reducing a thickness of an interfacial layer contains:
- (a) forming a film of an oxide of a first metal on a semiconductor layer with an oxide film of a semiconducdor serving as the interfacial layer intervening between the film of the oxide of the first metal and the semiconductor layer, where the semiconductor is a semiconductor contained in the semiconductor layer;
- and
- (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.
2 more elements
Dependencies are inferred from the claim text.