Fabricating method of semiconductor element
AssigneeUnited Microelectronics Corp.
InventorsMing-Te Wei, Po-Chao Tsao, Ming-Tsung Chen
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Abstract
The present invention relates to a fabricating method of a semiconductor element. First, a substrate is provided and a first layout structure having a first width is formed on the substrate. Then, an etching mask is formed to cover the first layout structure, and the etching mask exposes a portion of the first layout structure. After that, the first layout structure is etched with the etching mask to form a second layout structure having a second width. The second width is less than the first width. This fabricating method is capable of finishing the fabrication of gate structures in two different directions. Accordingly, the layout flexibility is improved.
Claims10
A fabricating method of a semiconductor element, comprising:
- proving a substrate;
- forming a first layout structure having a first width on the substrate with a dipole exposure method, wherein a lengthwise direction of the first layout structure is orthogonal to the first width thereof;
- forming an etching mask on the first layout structure, wherein the etching mask exposes a portion of the first layout structure along the lengthwise direction thereof;
- and
- performing an etching process with the etching mask to form a second layout structure having a second width less than the first width.
Dependencies are inferred from the claim text.