Carbosilane precursors for low temperature film deposition
AssigneeApplied Materials, Inc.
InventorsTimothy W. Weldman, Todd Schroeder
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Abstract
Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.
Claims8
A method of forming a layer on a substrate surface, the method comprising:
- providing a substrate;
- in a PECVD process exposing the substrate surface to a carbosilane precursor containing at least one methylene bridging two silicon atoms;
- exposing the carbosilane precursor to a direct plasma to provide a carbosilane at the substrate surface;
- stripping away at least some of the hydrogen atoms;
- and
- exposing the carbosilane surface to a nitrogen source to provide a film comprising SiCN suitable as a low k dielectric film.
The method of 6, wherein exposing the carbosilane to a plasma containing nitrogen results in the formation of N—H bonds that promote irreversible attachment of a monolayer of the carbosilane to the substrate surface.
Dependencies are inferred from the claim text.